PART |
Description |
Maker |
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors Bipolar Junction Transistor SILICON PNP TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semiconductors New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
BFP650F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
Q62701-F92 AF289 |
PNP GERMANIUM UHF TRANSISTOR
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BFP640F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
AF239 Q60106-X239 |
PNP GERMANIUM RF TRANSISTOR 进步党锗射频晶体
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BFR740L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|